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Atoms and molecules interact with each other through intermolecular forces. These electrostatic forces arise from attractive or repulsive interactions between particles with permanent, partial, or temporary charges. The intermolecular forces between neutral atoms and molecules are ion–dipole, dipole–dipole, and dispersion forces, collectively known as van der Waals forces.
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Multifunctional van der Waals Broken-Gap Heterojunction.

Pawan Kumar Srivastava1, Yasir Hassan2, Yisehak Gebredingle2

  • 1School of Mechanical Engineering, Sungkyunkwan University, Suwon, 16419, South Korea.

Small (Weinheim an Der Bergstrasse, Germany)
|February 8, 2019
PubMed
Summary

Black phosphorus/rhenium disulfide heterojunctions exhibit tunable electronic properties. Varying black phosphorus thickness controls band alignment, enabling diverse electronic devices like diodes and transistors.

Keywords:
bipolar junction transistorblack phosphorusbroken-gap heterojunctionnegative differential resistanceternary inverter

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Area of Science:

  • Condensed Matter Physics
  • Materials Science
  • Nanotechnology

Background:

  • Broken-gap heterojunctions exhibit unique phenomena due to finite energy band-offsets.
  • The work function of black phosphorus (BP) is tunable with flake thickness.

Purpose of the Study:

  • To demonstrate diverse current-transport characteristics in black phosphorus (BP)/rhenium disulfide (ReS2) heterojunctions.
  • To explore the impact of tunable BP work function on band-bending and device functionality.

Main Methods:

  • Fabrication of BP/ReS2 heterojunctions with varying BP flake thicknesses.
  • Characterization of current-transport properties under different conditions.
  • Optoelectronic experiments to confirm band-bending diversity.

Main Results:

  • Achieved diverse band-bending at the BP/ReS2 heterojunction by modulating BP work function.
  • Demonstrated gate-tunable rectifying p-n junction diodes, Esaki diodes, backward-rectifying diodes, and nonrectifying devices.
  • Observed multifunctionality in a p+-n-p junction, acting as inverters and bipolar junction transistors with high current gain.

Conclusions:

  • Band-bending diversity at the heterojunction is crucial for controlling current-transport characteristics.
  • BP/ReS2 heterojunctions offer a versatile platform for novel electronic and optoelectronic devices.
  • Tunable work function of 2D materials is a key parameter for designing advanced heterojunction devices.