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Updated: Jan 29, 2026

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
Published on: November 1, 2013
High-temperature continuous-wave operation of directly grown InAs/GaAs quantum dot lasers on on-axis Si (001)
Abstract:
Laser devices for silicon photonics are expected to be implemented in an integrated environment to complement CMOS devices. For this reason, quantum dot (QD) lasers with excellent thermal properties have been considered as strong candidates for Si photonics light sources. The direct growth of QD lasers on Si (001) on-axis substrates has been garnering attention owing to the possibility of monolithic integration on a CMOS-compatible wafer. In this paper, we report on the high-temperature (over 100°C) continuous-wave operation of an InAs/GaAs QD laser directly grown on on-axis Si (001) substrates through the use of only molecular beam epitaxy.
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The Dot Product
Dot Product
In engineering, the dot product of any two vectors is the product of the magnitudes of the vectors and the cosine of the angle between them. It is denoted by a dot symbol between the two vectors.
Consider a vehicle pulling an object along the ground using a rope. If the rope makes an angle with the horizontal axis, the work done can be calculated using the dot product of the force applied and the object's displacement.
The dot...

