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Defect-Affected Photocurrent in MoTe2 FETs.

Mohan Kumar Ghimire, Hyunjin Ji, Hamza Zad Gul

    ACS Applied Materials & Interfaces
    |February 15, 2019
    PubMed
    Summary
    This summary is machine-generated.

    Crystal imperfections like trap states significantly impact photocurrent in 2D materials. This study quantifies trap-state density in 2H-MoTe2, revealing photocurrent sensitivity to trap control via gate voltage.

    Keywords:
    MoTe2defectgate modulationmetal gatephotocurrenttrap and detrap

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    Area of Science:

    • Materials Science
    • Condensed Matter Physics
    • Semiconductor Physics

    Background:

    • Crystal lattice imperfections, including defects and dislocations, influence material properties.
    • Understanding these imperfections is crucial for optimizing electronic and optical device performance.

    Purpose of the Study:

    • Investigate the impact of mid-gap trap states on photocurrent in 10-atomic-layered 2H-MoTe2.
    • Quantify the trap-state density and analyze its effect on photoexcited carriers.

    Main Methods:

    • Fabrication and characterization of 2H-MoTe2 field-effect transistors.
    • Measurement of transient photocurrent under varying gate voltages (Vgs).
    • Analysis of drain current decay and photocurrent response to model trap behavior.

    Main Results:

    • Photocurrent in 2H-MoTe2 is highly sensitive to the density of active trap states.
    • Trap-state density was estimated to be approximately 5 × 10^11 cm^-2.
    • Gate voltage (Vgs) effectively controls the number of ionized traps, influencing photoexcited carrier dynamics.

    Conclusions:

    • Mid-gap trap states play a critical role in modulating photocurrent in 2D transition metal dichalcogenides.
    • A model incorporating hole traps, electron traps, and recombination centers accurately describes the observed photocurrent behavior.
    • This work provides insights into defect engineering for optoelectronic applications in MoTe2.