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    Area of Science:

    • Photonics
    • Integrated Optics
    • Semiconductor Devices

    Background:

    • Mode-evolution-based couplers are essential components in photonic integrated circuits.
    • Conventional designs often suffer from uneven adiabaticity and fabrication sensitivity.
    • Silicon-on-insulator (SOI) technology offers a robust platform for integrated photonics.

    Purpose of the Study:

    • To design and fabricate a 2x2 broadband and fabrication-tolerant 3 dB coupler.
    • To implement a fast quasi-adiabatic approach for enhanced device performance.
    • To demonstrate the viability of SOI rib waveguides for advanced photonic components.

    Main Methods:

    • Utilized mode-evolution principles based on adiabatic eigenmode transformation.
    • Employed a fast quasi-adiabatic approach to homogenize device adiabaticity.
    • Designed an optimized adiabatic taper region of 26.3 μm.
    • Fabricated devices using a complementary metal-oxide-semiconductor (CMOS) compatible process with 193 nm deep ultraviolet lithography.

    Main Results:

    • Achieved a broadband 3 dB ± 0.5 dB splitting over a 100 nm bandwidth.
    • Demonstrated uniform performance across a 200-mm wafer.
    • Exhibited good tolerance to fabrication variations, confirming device robustness.

    Conclusions:

    • The developed mode-evolution-based coupler offers excellent broadband performance and fabrication tolerance.
    • The fast quasi-adiabatic approach provides a shortcut to adiabaticity, improving coupler efficiency.
    • This device is suitable for various integrated photonic applications requiring precise light splitting.