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Generation and Coherent Control of Pulsed Quantum Frequency Combs
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Deterministic Quantum Emitter Formation in Hexagonal Boron Nitride via Controlled Edge Creation.

Joshua Ziegler1, Rachael Klaiss1, Andrew Blaikie1

  • 1Department of Physics; Material Science Institute; Center for Optical, Molecular, and Quantum Science , University of Oregon , Eugene , Oregon 97403 , United States.

Nano Letters
|February 16, 2019
PubMed
Summary
This summary is machine-generated.

Researchers developed a focused ion beam technique to pattern quantum emitters (QEs) in 2D hexagonal boron nitride (hBN). This method enables precise placement of QEs for enhanced integration into quantum devices.

Keywords:
2D materialQuantum emitterfocused ion beamhexagonal boron nitride

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Area of Science:

  • Materials Science
  • Quantum Optics
  • Nanotechnology

Background:

  • Quantum emitters (QEs) in 2D hexagonal boron nitride (hBN) exhibit high brightness and stability.
  • Their integration into quantum devices is hindered by nanofabrication challenges.
  • QEs in hBN often localize at material edges.

Purpose of the Study:

  • To develop a nanofabrication method for precisely patterning hBN QEs.
  • To investigate the potential for controlled integration of hBN QEs into hybrid devices.
  • To enhance the utility and accessibility of hBN QEs for quantum technologies.

Main Methods:

  • Focused ion beam (FIB) milling to create patterned holes in hBN.
  • Optical confocal microscopy for photoluminescence detection.
  • Second-order photon correlation measurements to identify single QEs.
  • Atomic force microscopy (AFM) for surface morphology analysis.

Main Results:

  • Arrays of bright, localized photoluminescence were observed matching FIB-patterned hole geometries.
  • Patterned spots contained single and multiple quantum emitters.
  • Optimized FIB parameters yielded patterned single QEs with 31% efficiency.
  • Smoothly milled holes on unwrinkled hBN maximized single QE yield.

Conclusions:

  • FIB milling is an effective technique for patterning hBN QEs.
  • This method facilitates the integration of hBN QEs into various quantum devices.
  • The developed technique represents a significant step towards large-scale photonic and quantum device fabrication.