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Updated: Jan 28, 2026

Preparation of Macroporous Epitaxial Quartz Films on Silicon by Chemical Solution Deposition
Published on: December 21, 2015
Synthesis and Exploratory Deposition Studies of Isotetrasilane and Reactive Intermediates for Epitaxial Silicon
Barry Arkles1, Youlin Pan1, Fernando Jove1
1Gelest Inc. , Morrisville , Pennsylvania 19067 , United States.
Abstract:
A synthetic method is presented for the production of isotetrasilane, a higher order perhydridosilane, with the purity and volume necessary for use in extensive studies of the chemical vapor deposition (CVD) of epitaxial silicon (e-Si) thin films. The chemical characteristics, thermodynamic properties, and epitaxial film growth of isotetrasilane are compared with those of other perhydridosilanes. A film-growth mechanism distinct from linear perhydridosilanes H(SiH2) nH, where n ≤ 4, is reported. Preliminary findings are summarized for CVD of both unstrained e-Si and strained e-Si doped with germanium (Ge) and carbon (C) employing isotetrasilane as the source precursor at temperatures of 500-550 °C. The results suggest that bis(trihydridosilyl)silylene is the likely deposition intermediate under processing conditions in which gas-phase depletion reactions are not observed.
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