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Self-Powered, Broad Band, and Ultrafast InGaN-Based Photodetector

Arun Malla Chowdhury1, Greeshma Chandan1, Rohit Pant1

  • 1Materials Research Centre , Indian Institute of Science , Bangalore 560012 , India.

ACS Applied Materials & Interfaces
|February 22, 2019
PubMed

Keywords:
S−I−S heterojunctionbroad band detectorsindium gallium nitridemolecular beam epitaxy (MBE)self-powered detectors

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