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Updated: Jan 28, 2026

Single Molecule Methods for Monitoring Changes in Bilayer Elastic Properties
Published on: November 3, 2008
Multi-Level Cell Properties of a Bilayer Cu₂O/Al₂O₃ Resistive Switching Device
Jonas Deuermeier1, Asal Kiazadeh2, Andreas Klein3
1i3N/CENIMAT, Department of Materials Science, Faculty of Science and Technology, Universidade NOVA de Lisboa and CEMOP/UNINOVA, Campus de Caparica, 2829-516 Caparica, Portugal. j.deuermeier@campus.fct.unl.pt.
Abstract:
Multi-level resistive switching characteristics of a Cu₂O/Al₂O₃ bilayer device are presented. An oxidation state gradient in copper oxide induced by the fabrication process was found to play a dominant role in defining the multiple resistance states. The highly conductive grain boundaries of the copper oxide-an unusual property for an oxide semiconductor-are discussed for the first time regarding their role in the resistive switching mechanism.
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