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Updated: Jan 28, 2026

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
Published on: May 28, 2016
Current channeling along extended defects during electroreduction of SrTiO3
Christian Rodenbücher1, Stephan Menzel2,3, Dominik Wrana2,3,4
1Forschungszentrum Jülich GmbH, Institute of Energy and Climate Research (IEK-3), 52425, Jülich, Germany. c.rodenbuecher@fz-juelich.de.
Abstract:
Electroreduction experiments on metal oxides are well established for investigating the nature of the material change in memresistive devices, whose basic working principle is an electrically-induced reduction. While numerous research studies on this topic have been conducted, the influence of extended defects such as dislocations has not been addressed in detail hitherto. Here, we show by employing thermal microscopy to detect local Joule heating effects in the first stage of electroreduction of SrTiO3 that the current is channelled along extended defects such as dislocations which were introduced mechanically by scratching or sawing. After prolonged degradation, the matrix of the crystal is also electroreduced and the influence of the initially present dislocations diminished. At this stage, a hotspot at the anode develops due to stoichiometry polarisation leading not only to the gliding of existing dislocations, but also to the evolution of new dislocations. Such a formation is caused by electrical and thermal stress showing dislocations may play a significant role in resistive switching effects.
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