Memristive characteristic of an amorphous Ga-Sn-O thin-film device

We have found a memristive characteristic of an α-GTO thin-film device. The α-GTO thin-film layer is deposited using radio-frequency (RF) magnetron sputtering at room temperature and sandwiched between the Al top and bottom electrodes. It is found that the hysteresis loop of the flowing current (I) and applied voltage (V) characteristic becomes larger and stable after the one hundredth cycle. The electrical resistances for the high-resistance state (HRS) and low-resistance state (LRS) are clearly different and relatively stable. Based on various analysis, it is suggested that the memristive characteristic is due to the chemical reaction between the SnO₂ and SnO blocked by AlO_x on the Al bottom electrode. It is marvelous that the memristive characteristic can be realized by such common materials, simple structures, and easy fabrication.