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Gate-Tunable Plasmon-Induced Transparency Modulator Based on Stub-Resonator Waveguide with Epsilon-Near-Zero
Long Tao1, Aleksei Anopchenko1, Sudip Gurung1
1Department of Physics, Baylor University, Waco, TX, 76798, United States.
Scientific Reports
|February 28, 2019
Summary
We developed an ultracompact plasmonic modulator using plasmon-induced transparency (PIT). This device achieves high modulation strength (>10 dB) in a small footprint (~1 μm) with low voltage (~3V).
Area of Science:
- Plasmonics
- Nanophotonics
- Integrated Optics
Background:
- Plasmonic modulators are crucial for optical communication.
- Achieving high modulation strength in a compact footprint remains a challenge.
Purpose of the Study:
- To demonstrate an electrically tunable, ultracompact plasmonic modulator.
- To achieve large modulation strength using plasmon-induced transparency (PIT).
Main Methods:
- Utilized a metal-oxide-semiconductor (MOS) slot waveguide structure with coupled stubs.
- Employed heavily n-doped indium tin oxide (ITO) as the semiconductor.
- Leveraged the epsilon-near-zero (ENZ) layer formation at the ITO-oxide interface.
Main Results:
- Achieved a plasmonic modulator with a footprint of ~1 μm.
- Demonstrated large modulation strength exceeding 10 dB.
- Required only a small applied voltage of approximately 3V for significant modulation.
Conclusions:
- The developed modulator shows promise for next-generation compact photonic/plasmonic integrated circuits.
- The PIT configuration combined with the ENZ effect offers an effective route for high-performance nanoscale modulators.
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