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Updated: Jan 28, 2026

Epitaxial Growth of Perovskite Strontium Titanate on Germanium via Atomic Layer Deposition
Published on: July 26, 2016
Computational modelling of atomic layer etching of chlorinated germanium surfaces by argon
Shenli Zhang1, Yihan Huang, Gulcin Tetiker
1Department of Materials Science & Engineering, University of California, Davis, One Shields Avenue, Davis, 95616, CA, USA.
Abstract:
The atomic layer etching of chlorinated germanium surfaces under argon bombardment was simulated using molecular dynamics with a newly fitted Tersoff potential. The chlorination energy determines the threshold energy for etching and the number of etched atoms in the bombardment phase. Etch rate is determined by bombardment energy.
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