Tunable Memristic Characteristics Based on Graphene Oxide Charge-Trap Memory
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Updated: Jan 28, 2026

Scalable Syntheses of Graphene Oxide and Reduced Graphene Oxide using Cascade Design Oxidation and Highly Basic Reduction Reactions
Published on: July 3, 2025
Lei Li1,2
1Key Laboratories of Senior-Education for Electronic Engineering, Heilongjiang University, Harbin 150080, China. lileidtk@hlju.edu.cn.
Abstract:
Solution-processable nonvolatile memory devices, consisted of graphene oxide (GO) embedded into an insulating polymer polymethyl methacrylate (PMMA), were manufactured. By varying the GO content in PMMA nanocomposite films, the memristic conductance behavior of the Ni/PMMA:GO/Indium tin oxide (ITO) sandwiched structure can be tuned in a controllable manner. An investigation was made on the memristic performance mechanism regarding GO charge-trap memory; these blends were further characterized by transmission electron microscope (TEM), scanning electron microscope (SEM), Fourier transform infrared spectra (FTIR), Raman spectra, thermogravimetric analysis, X-ray diffraction (XRD), ultraviolet-visible spectroscopy, and fluorescence spectra in particular. Dependent on the GO content, the resistive switching was originated from the charges trapped in GO, for which bipolar tunable memristic behaviors were observed. PMMA:GO composites possess an ideal capability for large area device applications with the benefits of superior electronic properties and easy chemical modification.
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