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Updated: Jan 28, 2026

Optimized Transfection Strategy for Expression and Electrophysiological Recording of Recombinant Voltage-Gated Ion Channels in HEK-293T Cells
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Optimized Transfection Strategy for Expression and Electrophysiological Recording of Recombinant Voltage-Gated Ion Channels in HEK-293T Cells

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Fully Ion Implanted Normally-Off GaN DMOSFETs with ALD-Al₂O₃ Gate Dielectrics

Michitaka Yoshino1, Yuto Ando2, Manato Deki3

  • 1Research Center of Ion Beam Technology, Hosei University, Tokyo 184-8584, Japan. michitaka.yoshino.86@hosei.ac.jp.

Materials (Basel, Switzerland)
|March 1, 2019
PubMed

Keywords:
GaNMOSFETMgSiion implantation

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