Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Field Effect Transistor01:29

Field Effect Transistor

1.2K
Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...
1.2K
Capacitors and Capacitance01:18

Capacitors and Capacitance

9.3K
A device consisting of two electrical conductors that are separated by a distance and used to store electrical charges is called a capacitor. The space between the conductors is either a vacuum or an insulating material, called a dielectric. Capacitors have many applications, ranging from filtering static from radio reception to energy storage in heart defibrillators.
When the conductors are two identical parallel plates, it is called a parallel plate capacitor. When battery terminals are...
9.3K
Equivalent Capacitance01:19

Equivalent Capacitance

2.2K
Multiple capacitors can be connected in a circuit in series or parallel configuration. When the capacitor combination is connected to a battery, the potential drop across each capacitor and the magnitude of charge stored in the individual capacitor depends on the type of the connection. The capacitor combination is replaced by a single equivalent capacitor that stores the same amount of charge as the combination for a given potential difference.
The following strategies are adopted to calculate...
2.2K
Equivalent Capacitance01:19

Equivalent Capacitance

705
From the study of resistive circuits, it is understood that employing a series-parallel combination serves as an effective strategy for simplifying circuits. Capacitors can be arranged within a circuit in one of two ways: a series configuration or a parallel configuration. The way these capacitors are connected to a battery will influence both the potential drop across each individual capacitor and the size of the charge that each capacitor can store. This is determined by the specific type of...
705
IR Frequency Region: Fingerprint Region01:03

IR Frequency Region: Fingerprint Region

1.9K
IR spectra are divided into two main regions: the diagnostic region and the fingerprint region. The diagnostic region of the spectrum lies above 1500 cm−1. The absorptions resulting from single-bond vibrations of the N–H, C–H, and O–H stretch at higher wavenumbers and appear on the left side of the spectrum. The stretching absorptions of the C≡C and C≡N occur between 2100–2300 cm−1. In contrast, those arising from stretching absorptions of the...
1.9K
Bipolar Junction Transistor01:22

Bipolar Junction Transistor

1.5K
Bipolar Junction Transistors (BJTs) are essential elements in electronic circuits, playing a crucial role in the functionality of amplifiers, memories, and microprocessors. These transistors can be designed as NPN or PNP based on their doping patterns. They consist of three layers: the emitter, base, and collector. The configuration of these layers and their respective doping levels—with N-type or P-type impurities—define the transistor's type and its operational...
1.5K

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Hematopoietic carcinogen assessment in bulk chemical products and air samples: focus on benzene exposure among subway maintenance workers.

Inhalation toxicology·2026
Same author

Addressing Food and Nutrition Security Through Community Initiatives: Assessment of Healthier Food Incentive Programs in U.S. Municipalities.

Nutrients·2026
Same author

MsrB2 deficiency amplifies ECM-driven cardiac fibrosis under hypertensive stress.

Frontiers in physiology·2026
Same author

Drug positivity, co-detection patterns, and demographic predictors in patients seeking substance use disorder treatment, United States, 2023.

Addictive behaviors·2026
Same author

Impact of Video-based Handover Training on Nursing Students' Teamwork Attitude: A Mixed-Methods Study.

Computers, informatics, nursing : CIN·2026
Same author

Mental health of women with HIV: a qualitative meta-synthesis.

BMC women's health·2026

Related Experiment Video

Updated: Jan 28, 2026

Fabrication of a Solution-gated Indium-Tin-Oxide-based One-piece Transistor Enabling Sensitive Biosensing
10:45

Fabrication of a Solution-gated Indium-Tin-Oxide-based One-piece Transistor Enabling Sensitive Biosensing

Published on: August 29, 2025

693

Highly Sensitive Active-Matrix Driven Self-Capacitive Fingerprint Sensor based on Oxide Thin Film Transistor.

Guk-Jin Jeon1, Seung-Hwan Lee2, Seung Hee Lee1

  • 1Korea Advanced Institute of Science and Technology, Department of Materials Science and Engineering, 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea.

Scientific Reports
|March 3, 2019
PubMed
Summary

This study introduces a novel self-capacitive fingerprint sensor using advanced oxide thin-film transistors (TFTs). This technology offers improved sensitivity and lower parasitic capacitance for reliable biometric authentication in mobile devices.

More Related Videos

The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors
12:32

The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors

Published on: May 24, 2020

9.2K
Sensitivity Enhancement of Soft Capacitive Pressure Sensors Using a Solvent Evaporation-Based Porosity Control Technique
10:28

Sensitivity Enhancement of Soft Capacitive Pressure Sensors Using a Solvent Evaporation-Based Porosity Control Technique

Published on: March 24, 2023

2.5K

Related Experiment Videos

Last Updated: Jan 28, 2026

Fabrication of a Solution-gated Indium-Tin-Oxide-based One-piece Transistor Enabling Sensitive Biosensing
10:45

Fabrication of a Solution-gated Indium-Tin-Oxide-based One-piece Transistor Enabling Sensitive Biosensing

Published on: August 29, 2025

693
The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors
12:32

The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors

Published on: May 24, 2020

9.2K
Sensitivity Enhancement of Soft Capacitive Pressure Sensors Using a Solvent Evaporation-Based Porosity Control Technique
10:28

Sensitivity Enhancement of Soft Capacitive Pressure Sensors Using a Solvent Evaporation-Based Porosity Control Technique

Published on: March 24, 2023

2.5K

Area of Science:

  • Materials Science
  • Electrical Engineering
  • Biometrics

Background:

  • Fingerprint recognition is a key biometric technology in mobile devices, primarily using silicon-based sensors.
  • Current mutual-capacitive sensors face limitations in sensitivity due to parasitic capacitance.
  • Thin-film technologies offer potential for cost reduction and wider application in fingerprint sensing.

Purpose of the Study:

  • To develop a highly sensitive self-capacitive fingerprint sensor.
  • To integrate oxide thin-film transistors (TFTs) for enhanced pixel isolation and reduced complexity.
  • To demonstrate the feasibility of using Al-InSnZnO TFTs in fingerprint sensor applications.

Main Methods:

  • Development of a self-capacitive fingerprint sensor architecture.
  • Integration of aluminum-indium-tin-zinc oxide (Al-InSnZnO) thin-film transistors (TFTs) with high field-effect mobility (>30 cm²/Vs).
  • Implementation of industry-friendly fabrication processes to minimize parasitic resistance and capacitance.

Main Results:

  • Achieved pixel isolation using high-performance oxide TFTs.
  • Demonstrated excellent uniformity and very low leakage current (<10⁻¹²) in the oxide TFTs.
  • Successfully captured high-quality fingerprint images, indicating sensor viability.

Conclusions:

  • The proposed self-capacitive fingerprint sensor with Al-InSnZnO TFTs overcomes the sensitivity limitations of mutual-capacitive sensors.
  • The use of oxide TFTs enables efficient pixel switching and isolation, crucial for high-resolution fingerprint imaging.
  • This approach paves the way for cost-effective, high-performance biometric sensors in consumer electronics.