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Related Concept Videos

Strong Acid and Base Solutions03:22

Strong Acid and Base Solutions

35.6K
A strong acid is a compound that dissociates completely in an aqueous solution and produces a concentration of hydronium ions equal to the initial concentration of acid. For example, 0.20 M hydrobromic acid will dissociate completely in water and produces 0.20 M of hydronium ions and 0.20 M of bromide ions.
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Titration Calculations: Strong Acid - Strong Base02:28

Titration Calculations: Strong Acid - Strong Base

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Calculating pH for Titration Solutions: Strong Acid/Strong Base
A titration is carried out for 25.00 mL of 0.100 M HCl (strong acid) with 0.100 M of a strong base NaOH. The pH at different volumes of added base solution can be calculated as follows:
(a) Titrant volume = 0 mL. The solution pH is due to the acid ionization of HCl. Because this is a strong acid, the ionization is complete and the hydronium ion molarity is 0.100 M. The pH of the solution is then:
33.8K
Titration of a Strong Acid with a Strong Base01:23

Titration of a Strong Acid with a Strong Base

10.5K
During the titration of a strong acid with a strong base, pH calculations are primarily based on the concentration of residual hydronium or hydroxide ions. Initially, a strong acid like hydrochloric acid fully dissociates, creating hydronium and chloride ions, resulting in a low pH. The addition of a strong base like sodium hydroxide alters the concentration of hydronium ions by neutralizing them. As more base is added, the pH gradually increases. At the equivalence point, all hydronium ions...
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Hardy-Weinberg Principle01:49

Hardy-Weinberg Principle

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Diploid organisms have two alleles of each gene, one from each parent, in their somatic cells. Therefore, each individual contributes two alleles to the gene pool of the population. The gene pool of a population is the sum of every allele of all genes within that population and has some degree of variation. Genetic variation is typically expressed as a relative frequency, which is the percentage of the total population that has a given allele, genotype or phenotype.
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The Uncertainty Principle04:08

The Uncertainty Principle

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Werner Heisenberg considered the limits of how accurately one can measure properties of an electron or other microscopic particles. He determined that there is a fundamental limit to how accurately one can measure both a particle’s position and its momentum simultaneously. The more accurate the measurement of the momentum of a particle is known, the less accurate the position at that time is known and vice versa. This is what is now called the Heisenberg uncertainty principle. He...
31.8K
Oxidation Numbers03:14

Oxidation Numbers

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In redox reactions, the transfer of electrons occurs between reacting species. Electron transfer is described by a hypothetical number called the oxidation number (or oxidation state). It represents the effective charge of an atom or element, which is assigned using a set of rules.
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Related Experiment Video

Updated: Jan 28, 2026

Probe Type II Band Alignment in One-Dimensional Van Der Waals Heterostructures Using First-Principles Calculations
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Strong selective oxidization on two-dimensional GaN: a first principles study.

Jiabo Chen1, Jiaduo Zhu, Jing Ning

  • 1Wide Bandgap Semiconductor Technology Disciplines State Key Laboratory, School of Microelectronics, Xidian University, Xi'an 710071, China. jdzhu@xidian.edu.cn jchzhang@xidian.edu.cn.

Physical Chemistry Chemical Physics : PCCP
|March 5, 2019
PubMed
Summary
This summary is machine-generated.

Investigating the oxidation of two-dimensional gallium nitride (2D GaN) reveals significant surface changes. Oxygen adsorption alters 2D GaN, impacting its electronic properties and forming a new GaNO compound.

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Area of Science:

  • Materials Science
  • Surface Chemistry
  • Computational Chemistry

Background:

  • Two-dimensional (2D) materials offer unique electronic and physical properties.
  • Gallium nitride (GaN) is a key material in semiconductor devices.
  • Understanding surface interactions is crucial for 2D material applications.

Purpose of the Study:

  • To investigate the chemical oxidation process of 2D gallium nitride (GaN).
  • To determine the effects of oxygen adsorption on GaN surfaces.
  • To explore the formation of new compounds and changes in electronic properties.

Main Methods:

  • Utilizing ab initio calculations to simulate oxygen adsorption on 2D GaN.
  • Analyzing surface configurations and energy barriers for chemical reactions.
  • Calculating work function changes and identifying new material phases.

Main Results:

  • Oxygen adsorption on the nitrogen surface of 2D GaN leads to a metastable configuration.
  • The gallium surface readily transforms to a stable HO-GaN-H configuration with a low energy barrier.
  • Oxygen adatoms reduce the work function and transform 2D GaN into a new GaNO compound.

Conclusions:

  • The oxidation of 2D GaN significantly alters its surface structure and stability.
  • New GaNO compounds can form, impacting the electronic properties of 2D GaN.
  • Oxidation effects must be considered for practical applications of 2D GaN devices.