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Impact of Oxygen Vacancy on the Photo-Electrical Properties of In₂O₃-Based Thin-Film Transistor by Doping Ga

Kuan-Yu Chen1,2, Chih-Chiang Yang3, Yan-Kuin Su4,5

  • 1Department of Electrical Engineering, Institute of Microelectronics, National Cheng Kung University, Tainan 701, Taiwan. cncer7025@gmail.com.

Materials (Basel, Switzerland)
|March 7, 2019
PubMed

Keywords:
co-sputteringoxygen vacanciesthin-film transistor

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