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A HfO₂/SiTe Based Dual-Layer Selector Device with Minor Threshold Voltage Variation.
Bing Song1, Rongrong Cao2, Hui Xu3
1College of Electronic Science, National University of Defense Technology, Changsha 410073, China. songbing@nudt.edu.cn.
A dual-layer structure improves volatile programmable metallization cells by enhancing selectivity and reducing threshold voltage variation. This advancement addresses key challenges for practical applications of these promising selector devices.
Area of Science:
- Materials Science
- Electrical Engineering
- Device Physics
Background:
- Volatile programmable metallization cells (VPMCs) are promising threshold switching selectors.
- Large threshold voltage variation hinders VPMC practical application.
Purpose of the Study:
- To propose and investigate a dual-layer structure for VPMCs.
- To enhance selectivity and improve threshold voltage uniformity.
Main Methods:
- Fabrication of single-layer and dual-layer VPMC devices.
- Characterization of electrical properties, including selectivity and threshold voltage variation.
- Analysis of filament formation and rupture mechanisms.
Main Results:
- Dual-layer devices exhibit significantly higher selectivity (>10⁷) compared to single-layer devices.
- Improved threshold voltage uniformity with less than 5% fluctuation over 200 DC switching cycles.
- HfO₂ layer introduction aids in controlling filament formation/rupture location.
Conclusions:
- The dual-layer structure effectively addresses the threshold voltage variation issue in VPMCs.
- Differences in Ag ion mobility between SiTe and HfO₂ layers are crucial for device performance.
- This work presents a viable strategy for developing reliable VPMC selectors.
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