A HfO/SiTe Based Dual-Layer Selector Device with Minor Threshold Voltage Variation.

Bing Song1, Rongrong Cao2, Hui Xu3

  • 1College of Electronic Science, National University of Defense Technology, Changsha 410073, China. songbing@nudt.edu.cn.

Summary

A dual-layer structure improves volatile programmable metallization cells by enhancing selectivity and reducing threshold voltage variation. This advancement addresses key challenges for practical applications of these promising selector devices.

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