Misfit strain-induced energy dissipation for graphene/MoS2 heterostructure nanomechanical resonators
1Shanghai Institute of Applied Mathematics and Mechanics, Shanghai Key Laboratory of Mechanics in Energy Engineering, Shanghai University, Shanghai 200072, People's Republic of China.
Abstract:
Misfit strain is inevitable in various heterostructures like the graphene/MoS2 van der Waals heterostructure. Although the misfit strain effect on electronic and other physical properties have been well studied, it is still unclear how the misfit strain will affect the performance of the nanomechanical resonator based on the graphene/MoS2 heterostructure. By performing molecular dynamics simulations, we disclose a misfit strain-induced decoupling phenomenon between the graphene layer and the MoS2 layer during the resonant oscillation of the heterostructure. A direct relationship between the misfit strain and the decoupling mechanism is successfully established through the retraction force analysis. We further suggest to use the graphene/MoS2/graphene sandwich heterostructure for the nanomechanical resonator application, which is able to prevent the misfit strain-related decoupling phenomenon. These results provide valuable information for the future application of the graphene/MoS2 heterostructure in the nanomechanical resonator field.
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