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Stack of two III-nitride laser diodes interconnected by a tunnel junction
Optics Express
|March 17, 2019
Summary
We developed stacked III-nitride laser diodes (LDs) using tunnel junctions (TJ). This novel design enhances efficiency, enabling high-power ultraviolet and visible light emission for advanced applications.
Area of Science:
- Materials Science
- Optoelectronics
- Semiconductor Physics
Background:
- III-nitride semiconductor materials are crucial for optoelectronic devices.
- Efficient interconnection of multiple laser diode (LD) layers is challenging.
- Tunnel junctions (TJs) are key for integrating semiconductor devices.
Purpose of the Study:
- To demonstrate a stack of two III-nitride laser diodes (LDs) interconnected by a tunnel junction (TJ).
- To investigate the impact of TJ design on device performance.
- To achieve high-power pulsed operation in the ultraviolet and visible spectrum.
Main Methods:
- Plasma-assisted molecular beam epitaxy (MBE) for hydrogen-free growth.
- Fabrication of buried tunnel junctions (TJs) with optimized heavy doping.
- Characterization of lasing performance, including wavelength and slope efficiency (SE).
Main Results:
- Achieved successful interconnection of two III-nitride LDs via a TJ.
- Demonstrated lasing at 459 nm (SE: 0.7 W/A) and 456 nm (SE: 1.4 W/A).
- Showed that heavy doping and piezoelectric polarization in TJs reduce differential resistivity.
Conclusions:
- The developed stacked III-nitride LDs offer a pathway to high-power pulsed sources.
- This technology enables new possibilities for ultraviolet and visible laser diode fabrication.
- Optimized TJs are critical for efficient integration and performance enhancement.
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