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The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors
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Optimization of the Anodization Processing for Aluminum Oxide Gate Dielectrics in ZnO Thin Film Transistors by

Tiago C Gomes1, Dinesh Kumar2, Lucas Fugikawa-Santos3

  • 1UNESP-São Paulo State University , School of Technology and Sciences , 19060-900 Presidente Prudente , Brazil.

ACS Combinatorial Science
|March 21, 2019
PubMed

Keywords:
ANOVAPlackett−Burman designaluminum oxideanodizationdesign of experimentsthin-film transistors

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