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Gate-Tunable Photodetection/Voltaic Device Based on BP/MoTe2 Heterostructure.

Yuan Xie1, Enxiu Wu1, Jing Zhang1

  • 1State Key Laboratory of Precision Measurement Technology and Instruments, School of Precision Instruments and Opto-Electronics Engineering , Tianjin University , No. 92 Weijin Road , Tianjin 300072 , China.

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|March 26, 2019
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Summary
This summary is machine-generated.

This study demonstrates a tunable molybdenum ditelluride/black phosphorus (MoTe2/BP) heterostructure for advanced optoelectronics. Gate modulation dynamically controls the device

Keywords:
BPMoTe2gate modulationheterostructurephotovoltaic inversion

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • Van der Waals heterostructures from 2D materials are promising for optoelectronics.
  • Tunable Fermi levels in 2D materials allow dynamic device performance control.

Purpose of the Study:

  • To demonstrate a MoTe2/BP heterostructure with gate-tunable p-n or p-p junction characteristics.
  • To investigate the electrostatic gating effect on the photoresponse of the heterostructure.

Main Methods:

  • Fabrication of MoTe2/BP van der Waals heterostructure.
  • Utilizing electrostatic gating to modulate Fermi levels and junction type.
  • Characterizing photoresponse, photoresponsivity, external quantum efficiency, and response time.

Main Results:

  • Successfully demonstrated a dynamically tunable MoTe2/BP heterostructure.
  • Achieved control over photoresponse polarity and magnitude via gate modulation.
  • Exhibited excellent photodetection performance: 0.2 A/W photoresponsivity, 48.1% EQE, and 2 ms response time.

Conclusions:

  • The study enhances understanding of gate-tunable 2D heterostructures.
  • MoTe2/BP heterostructures show significant potential for future optoelectronic applications.