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Fabrication of Fully Solution Processed Inorganic Nanocrystal Photovoltaic Devices
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Solution-Processed Organic Photodetector Using Hafnium Oxide as an Electron Blocking Layer.

D H Song1, K T Kim1, C H Ji1

  • 1Department of Chemical and Biomolecular Engineering, Sogang University, Seoul 121-742, Korea.

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|March 28, 2019
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Summary

Researchers reduced organic photodetector (OPD) leakage current using hafnium oxide as an electron blocking layer. An ultrathin hafnium oxide film significantly improved the OPD

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Area of Science:

  • Organic electronics
  • Photodetector technology
  • Materials science

Background:

  • Leakage current significantly impacts organic photodetector (OPD) performance.
  • Electron blocking layers are crucial for minimizing leakage current in OPDs.

Purpose of the Study:

  • To decrease leakage current in organic photodetectors.
  • To introduce hafnium oxide (HfO₂) as an effective electron blocking material.

Main Methods:

  • Fabrication of an OPD with the structure ITO/HfO₂/PCHT:PC₆₀BM/Yb/Al using a solution process.
  • Measurement of J-V characteristics, external quantum efficiency, and transient photocurrents.
  • Systematic variation of hafnium oxide layer thickness.

Main Results:

  • The thickness of the HfO₂ layer critically influenced the OPD's detectivity.
  • An OPD with a 5.5 nm HfO₂ film achieved an on-off current ratio of 2.26 × 10⁵ at -1 V.
  • This performance is double that of devices using a PEDOT:PSS electron blocking layer.

Conclusions:

  • Ultrathin hafnium oxide is a highly effective electron blocking material for organic photodetectors.
  • Solution-processed hafnium oxide offers a promising route to enhance OPD performance.
  • The study demonstrates a significant improvement in OPD on-off current ratio using HfO₂.