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Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
Published on: April 12, 2018
In-Plane Anisotropic Raman Response and Electrical Conductivity with Robust Electron-Photon and Electron-Phonon
Qi Zheng1, Pinyun Ren2, Yuehua Peng1
1Synergetic Innovation Center for Quantum Effects and Application, Key Laboratory of Low-dimensional Quantum Structures and Quantum Control of Ministry of Education, School of Physics and Electronics , Hunan Normal University , Changsha 410081 , People's Republic of China.
Abstract:
The monoclinic m-MoO2 shows strong in-plane anisotropy that is essential to design anisotropic nanodevices. However, there is not yet detailed study on the anisotropy of m-MoO2 nanostructures. Here, the in-plane anisotropic Raman spectra and electrical conductivity of single-crystal m-MoO2 nanosheets were investigated systematically for the first time. Angle-resolved polarized Raman spectroscopy (ARPRS) shows distinct dependence on the excitation laser wavelength and sample thickness, demonstrating the robust wavelength-dependent optical absorption, electron-photon/electron-phonon interactions, and anisotropic phonon polarization in m-MoO2 nanosheets. Such results agree well with the semiclassical Placzek model. Moreover, the angle-dependent electrical conductivity of starburst-like m-MoO2 nanosheet devices shows a strong anisotropy with a conductivity ratio (σmax/σmin) of up to 10.1, which is the largest value in the previously reported 2D materials. This work underscores the importance of understanding the in-plane anisotropic light-matter interactions for the application of m-MoO2 nanosheets in anisotropic plasmonics and artificial synapse.
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