High-Performance Solution-Processed Organo-Metal Halide Perovskite Unipolar Resistive Memory Devices in a Cross-Bar...

Area of Science:

• Materials Science
• Electrical Engineering
• Solid-State Physics

Background:

• Resistive random access memories (RRAM) offer a promising alternative to existing memory technologies.
• Organo-metal halide perovskites show potential for RRAM due to low-voltage operation and high ON/OFF ratios.
• Combining the endurance of dynamic random-access memory (DRAM) and retention of flash memory is a key goal.

Purpose of the Study:

• To fabricate unipolar resistive memory devices using a nonhalide lead source and perovskite films.
• To evaluate the memory properties of these perovskite devices, including ON/OFF ratio, endurance, and retention time.
• To demonstrate a high-yield, solution-based fabrication method for practical perovskite memory devices.

Main Methods:

• Utilized a nonhalide lead source for perovskite film deposition.
• Employed a single-step spin-coating method for film fabrication.
• Fabricated unipolar resistive memory devices in a cross-bar array architecture.

Main Results:

• Achieved a high ON/OFF ratio of up to 10^8.
• Demonstrated low operation voltage requirements.
• Exhibited large endurance and long retention times for the perovskite memory devices.

Conclusions:

• The developed perovskite memory devices exhibit excellent performance characteristics.
• The solution-process fabrication method is high-yield and suitable for large-scale production.
• This work represents a significant step towards low-cost, high-density practical perovskite memory devices.