Defect influence on in-plane photocurrent of InAs/InGaAs quantum dot array: long-term electron trapping and Coulomb

Sergii Golovynskyi1,2, Oleksandr I Datsenko3, Luca Seravalli4

  • 1Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen University, 518060, Shenzhen, People's Republic of China.

Nanotechnology
|April 12, 2019
PubMed

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