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Linear magnetoresistance in the low-field limit in density-wave materials
Yejun Feng1, Yishu Wang2, D M Silevitch2
1Okinawa Institute of Science and Technology Graduate University, Onna, 904-0495 Okinawa, Japan; yejun@oist.jp tfr@caltech.edu.
Researchers discovered metallic systems with large positive linear magnetoresistance (MR), a property robust even at low magnetic fields. This finding offers a new understanding of MR phenomena in certain materials.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Solid-State Physics
Background:
- Magnetoresistance (MR) typically shows quadratic dependence on magnetic field and is insensitive to field direction.
- Linear MR can arise from quantum effects, topological band structures, or current path inhomogeneities.
- Existing linear MR mechanisms are often sensitive to low magnetic fields.
Purpose of the Study:
- To investigate metallic charge- and spin-density-wave systems exhibiting large positive linear MR.
- To understand the underlying physics of this robust linear MR phenomenon.
- To propose a semiclassical explanation applicable to materials with partially gapped Fermi surfaces.
Main Methods:
- Experimental exploration of metallic charge- and spin-density-wave systems.
- Measurement of magnetoresistance under varying magnetic field strengths and directions.
- Theoretical framing using a semiclassical approach.
Main Results:
- Identification of metallic charge- and spin-density-wave systems with extremely large positive linear MR.
- Demonstration that this linear MR effect is robust and observable at very low magnetic fields (tens of Oersted).
- Observation of the effect at low temperatures.
Conclusions:
- The studied density-wave systems present a unique platform for observing large, robust linear magnetoresistance.
- A semiclassical model provides a viable explanation for this phenomenon in materials with partially gapped Fermi surfaces.
- This work expands the understanding of non-conventional magnetoresistance mechanisms.
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