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Linear magnetoresistance in the low-field limit in density-wave materials
Yejun Feng1, Yishu Wang2, D M Silevitch2
1Okinawa Institute of Science and Technology Graduate University, Onna, 904-0495 Okinawa, Japan; yejun@oist.jp tfr@caltech.edu.
Abstract:
The magnetoresistance (MR) of a material is typically insensitive to reversing the applied field direction and varies quadratically with magnetic field in the low-field limit. Quantum effects, unusual topological band structures, and inhomogeneities that lead to wandering current paths can induce a cross-over from quadratic to linear MR with increasing magnetic field. Here we explore a series of metallic charge- and spin-density-wave systems that exhibit extremely large positive linear MR. By contrast to other linear MR mechanisms, this effect remains robust down to miniscule magnetic fields of tens of Oersted at low temperature. We frame an explanation of this phenomenon in a semiclassical narrative for a broad category of materials with partially gapped Fermi surfaces due to density waves.
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