Pressure-Induced Formation of Quaternary Compound and In-N Distribution in InGaAsN Zincblende from Ab Initio

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Prayoonsak Pluengphon1, Pornsiri Wanarattikan1, Thiti Bovornratanaraks2,3

  • 1Division of Physical Science Faculty of Science and Technology Huachiew Chalermprakiet University Samutprakarn 10540 Thailand.

Chemistryopen
|April 13, 2019
PubMed

Keywords:
electronic structurephotoabsorptionquaternary alloystructural stability

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