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Updated: Jan 26, 2026

Plasma-Assisted Molecular Beam Epitaxy Growth of Mg3N2 and Zn3N2 Thin Films
Published on: May 11, 2019
Electric field control of resistive switching and magnetization in epitaxial LaBaCo2O5+δ thin films
Jamal Shaibo1, Rui Yang, Zhe Wang
1Key Laboratory of Material Processing and Die & Mould Technology, Laboratory of Solid State Ionics, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, P. R. China. yangrui@hust.edu.cn xguo@hust.edu.cn.
Abstract:
The low operating temperature and volatile characteristics of the magnetization change are the main obstacles for the practical applications of spintronic and magnetic memories. In this work, both the resistive switching and magnetization switching are realized in Pt/LaBaCo2O5+δ (LBCO)/Nb-doped SrTiO3 (Nb-STO) devices at room temperature through an electric field. Unlike the traditional approach of an external stress inducing a volatile magnetization change, the magnetization in the Pt/LBCO/Nb-STO device is modulated by an electrical field, along with the resistive switching. The resistive and magnetization switching can be attributed to the variation of the depletion layer width at the LBCO/Nb-STO interface via oxygen vacancy migration and the increase/decrease of the Co-O-Co bond length, respectively. The present device with the synchronous manipulation of both resistance and magnetization at room temperature can be applied in nonvolatile resistive memories and novel magnetic multifunctional devices.
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