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This study demonstrates the quantum anomalous Hall effect in magnetic topological insulator films for metrology. Researchers achieved precise Hall resistance quantization, but high currents caused breakdown due to electron heating.

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Area of Science:

  • Condensed Matter Physics
  • Quantum Materials Science

Background:

  • The quantum anomalous Hall effect (QAHE) theoretically offers quantized Hall resistance and zero longitudinal resistivity without external magnetic fields.
  • This effect relies on dissipationless chiral edge states and an insulating bulk in magnetic topological insulators.
  • Potential metrological applications of QAHE necessitate precise characterization and understanding of its operational limits.

Purpose of the Study:

  • To investigate the metrological potential of the quantum anomalous Hall effect in magnetic topological insulator thin films.
  • To experimentally measure the precision of Hall resistance quantization and longitudinal resistivity under zero magnetic field.
  • To identify the critical current density leading to the breakdown of the quantized, low-dissipation state.

Main Methods:

  • Utilized a cryogenic current comparator system for high-precision measurements.
  • Measured Hall resistance quantization to parts-per-million accuracy.
  • Measured longitudinal resistivity under 10 mΩ at low current bias.
  • Investigated transport properties (temperature, current, geometry) in the prebreakdown regime.

Main Results:

  • Achieved precise quantization of Hall resistance to within one part per million.
  • Measured longitudinal resistivity below 10 mΩ at zero magnetic field.
  • Observed a breakdown of the quantized state at critical current densities, attributed to electron heating.
  • Found evidence of bulk dissipation, including thermal activation and variable-range hopping, in the prebreakdown regime.

Conclusions:

  • Magnetic topological insulator thin films show promise for metrological applications leveraging the quantum anomalous Hall effect.
  • Electron heating in the bulk is identified as the mechanism for breakdown of the quantized state at higher current densities.
  • Further research is needed to understand and mitigate bulk dissipation for enhanced device performance and stability.