Related Experiment Video
Updated: Jan 26, 2026

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
Published on: June 3, 2015
Research on the Surface Evolution of Single Crystal Silicon Mirror Contaminated by Metallic Elements during Elastic
Wanli Zhang1, Feng Shi2, Yifan Dai3
1College of Artificial Intelligence and Automation, National University of Defense Technology, 109 Deya Road, Changsha 410073, Hunan, China. zhangwanli17@nudt.edu.cn.
Abstract:
Metallic elements can contaminate single crystal silicon mirror during ion beam etching (IBE) and other postprocessing methods, which can affect the performance of components in an infrared laser system. In this work, scanning electron microscope (SEM) and atomic force microscope (AFM) were used to characterize the distribution of contaminant represented by aluminum (Al). After characterizing contaminated area, elastic jet polishing (EJP), EJP, and static alkaline etching (SAE) combined technique were used to process the mirror. The morphology and laser-induced absorption were measured. Results show that metallic elements can mix with silicon and generate bulges due to the sputtering effect. In addition, SAE and EJP combined technique can remove metallic contaminant and stabilize the surface quality. Research results can be a reference on conducting postprocessing technologies to improve laser damage resistance property of single crystal silicon mirror in infrared laser system.
More Related Videos
Related Concept Videos
The Evidence for Evolution
Classification of Elements and Compounds
Compounds are pure substances composed of two or more elements in fixed, definite proportions. Compounds are classified as ionic or molecular (covalent) based on the bonds...
Periodic Classification of the Elements
Convergent Evolution
Free Jet
Alkali Metals
Table 1: Properties of the alkali metals

