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All Nonmetal Resistive Random Access Memory.

Te Jui Yen1, Andrei Gismatulin2, Vladimir Volodin2,3

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This study introduces a novel Resistive Random Access Memory (RRAM) device without metallic components, utilizing a silicon-based diode structure. It exhibits a large resistance window and stable retention, with charge transport explained by percolation theory.

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Area of Science:

  • Materials Science
  • Electrical Engineering
  • Solid-State Physics

Background:

  • Traditional Resistive Random Access Memory (RRAM) relies on metal-insulator-metal (MIM) structures with metallic filaments for charge transport.
  • Metal oxides are commonly employed as insulators in conventional RRAM devices.

Purpose of the Study:

  • To demonstrate a novel RRAM device architecture that eliminates metallic components.
  • To investigate the charge transport mechanisms and memory characteristics of a metal-free RRAM device.

Main Methods:

  • Fabrication of a N+-Si/SiOx/P+-Si diode structure for RRAM application.
  • Electrical characterization including resistance window and retention measurements at various temperatures.
  • X-ray photoelectron spectroscopy (XPS) to analyze the composition of the SiOx layer.

Main Results:

  • Achieved a significant high-resistance/low-resistance window of 1.9 × 104 at room temperature.
  • Demonstrated favorable retention memory window of 1.2 × 103 for 104 s at 85°C.
  • Identified Shklovskii-Efros percolation as the dominant charge transport mechanism, distinct from metallic filament theory. XPS confirmed SiOx with x=0.62, indicating sufficient oxygen vacancies.

Conclusions:

  • The novel N+IP+ diode structure offers a viable metal-free alternative for RRAM applications.
  • The device exhibits promising performance metrics for memory applications, including a large resistance window and good retention.
  • Understanding the charge transport mechanism via percolation theory is crucial for optimizing metal-free RRAM performance.