Design and Demonstration of Tunable Amplified Sensitivity of AlGaN/GaN High Electron Mobility Transistor (HEMT)-Based

Tse-Yu Tai, Anirban Sinha, Indu Sarangadharan

  • 1Department of Electrical Engineering , National Central University , Zhongli District, Taoyuan City 320 , Taiwan, R.O.C.

Analytical Chemistry
|April 18, 2019
PubMed

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