Integration of GaN light-emitting diodes with a-Si:H thin-film transistors for flexible displays

In this work, the successful integration of a-Si:H thin-film transistors (TFTs) and high-efficiency μ-iLEDs on large-area flexible substrates has been demonstrated. A conventional low-temperature a-Si:H TFT fabrication process combined with a laser lift-off transfer procedure was used to integrate μ-iLEDs with flexible TFT pixel circuits. Electrical and optical characterization showed the current-voltage and electroluminescence characteristics of the TFTs and LEDs did not change after integration onto the flexible platforms. This approach provides a potential methodology for creating flexible optoelectronic systems for wearable and large-area display applications.