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Optimized Fabrication Procedure for High-Quality Graphene-based Moiré Superlattice Devices
Published on: July 11, 2025
Quantum transport in graphene p-n junctions with moiré superlattice modulation
Jiuning Hu1,2, Albert F Rigosi1, Ji U Lee3
1Physical Measurement Laboratory, National Institute of Standards and Technology (NIST), Gaithersburg, Maryland 20899, USA.
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We present simulations of quantum transport in graphene p-n junctions (pnJs) in which moiré superlattice potentials are incorporated to demonstrate the interplay between pnJs and moiré superlattice potentials. It is shown that the longitudinal and Hall resistivity maps can be strongly modulated by the pnJ profile, junction height, and moiré potentials. Device resistance measurements are subsequently performed on graphene/hexagonal- boron-nitride heterostructure samples with accurate alignment of crystallographic orientations to complement and support the simulation results.
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