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Stable Sn2+ doped FAPbI3 nanocrystals for near-infrared LEDs
Raihana Begum1, Xin Yu Chin, Mingjie Li
1Energy Research Institute@NTU (ERI@N), Nanyang Technological University, Research Techno Plaza, X-Frontier Block, Level 5, 50 Nanyang Drive, 637553, Singapore. Nripan@ntu.edu.sg.
Abstract:
Herein, we report Sn2+ doping in FAPbI3 NCs to stabilize the α-phase, while using propionic acid as a co-ligand. The Sn2+ doping enhances the emission quantum yield from 35% to 63% and dramatically improves the colloidal and phase stability. Also, we demonstrated the use of Sn doped FAPbI3 NCs in near-infrared (NIR) LEDs.
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