Related Experiment Video
Updated: Jan 26, 2026

Development and Functionalization of Electrolyte-Gated Graphene Field-Effect Transistor for Biomarker Detection
Published on: February 1, 2022
Large bandgap of pressurized trilayer graphene
Feng Ke1, Yabin Chen2, Ketao Yin3
1Center for High Pressure Science and Technology Advanced Research, 201203 Shanghai, China.
Abstract:
Graphene-based nanodevices have been developed rapidly and are now considered a strong contender for postsilicon electronics. However, one challenge facing graphene-based transistors is opening a sizable bandgap in graphene. The largest bandgap achieved so far is several hundred meV in bilayer graphene, but this value is still far below the threshold for practical applications. Through in situ electrical measurements, we observed a semiconducting character in compressed trilayer graphene by tuning the interlayer interaction with pressure. The optical absorption measurements demonstrate that an intrinsic bandgap of 2.5 ± 0.3 eV could be achieved in such a semiconducting state, and once opened could be preserved to a few GPa. The realization of wide bandgap in compressed trilayer graphene offers opportunities in carbon-based electronic devices.
Related Concept Videos
Vapor Pressure
Definition and Measurement of Pressure: Atmospheric Pressure, Barometer, and Manometer
Constant Pressure Calorimetry
Vapor Pressure Lowering
Osmosis and Osmotic Pressure of Solutions
Pressure Gauges

