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Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors
Published on: November 7, 2016
pJ-Level Energy-Consuming, Low-Voltage Ferroelectric Organic Field-Effect Transistor Memories
Mengjiao Pei1, Jun Qian1, Sai Jiang1
1National Laboratory of Solid-State Microstructures, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures , Nanjing University , Nanjing , Jiangsu 210093 , People's Republic of China.
Abstract:
Ferroelectric organic field-effect transistors (Fe-OFETs) have attracted considerable attention because of their promising potential for memory applications, while a critical issue is the large energy consumption mainly caused by a high operating voltage and slow data switching. Here, we employ ultrathin ferroelectric polymer and semiconducting molecular crystals to create low-voltage Fe-OFET memories. Devices require only pJ-level energy consumption. The writing and erasing processes require ∼1.2 and 1.6 pJ/bit, respectively, and the reading energy is ∼1.9 pJ/bit (on state) and ∼0.2 fJ/bit (off state). Thus, our memories consume only <0.1% of the energy required for devices using bulk functional layers. Besides, our devices also exhibit low contact resistance and steep subthreshold swing. Therefore, we provide a strategy that opens up a path for Fe-OFETs toward emerging applications, such as wearable electronics.
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