Room-temperature, atmospheric-pressure microsputtering of dense, electrically conductive, sub-100 nm gold films

In this study, we investigate the effects of deposition parameters (i.e. gas flow rates, bias voltages, and nozzle-to-substrate separation) on the microstructure of <100 nm thick gold deposits made with a room-temperature, atmospheric-pressure, ion-drag microsputterer. Without resorting to the use of vacuum or substrate heating, optimization of the printing process yields dense, continuous deposits (96.5% coverage) with low electrical resistivity (45 μΩ cm). Using statistical analysis, we developed a simple model that provides insight into the dynamics of such a printing method; based on this model, we identify electrostatic effects as the most important factor that influences the deposition process.