Preparation of non-oxidized Ge quantum dot lattices in amorphous Al₂O₃, Si₃N₄ and SiC matrices

The preparation of non-oxidized Ge quantum dot (QD) lattices embedded in Al₂O₃, Si₃N₄, SiC matrices by self-assembled growth was studied. The materials were produced by magnetron sputtering deposition, using different substrate temperatures. The deposition regimes leading to the self-assembled growth type and the formation of three-dimensionally ordered Ge QD lattices in different matrices were investigated and determined. The oxidation of the Ge QDs in different matrices was monitored and the best conditions for the production of non-oxidized Ge QDs were found. The optical properties of the Ge QD lattices in different matrices show a strong dependence on the Ge oxidation and the matrix type.