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Preparation of Liquid-exfoliated Transition Metal Dichalcogenide Nanosheets with Controlled Size and Thickness: A State of the Art Protocol
Published on: December 20, 2016
Enhanced Valley Splitting of Transition-Metal Dichalcogenide by Vacancies in Robust Ferromagnetic Insulating Chromium
Changqing Lin1, Yiran Li1, Qilin Wei1
1Key Laboratory of Flexible Electronics & Institute of Advanced Materials, Jiangsu National Synergetic Innovation Center for Advanced Materials , Nanjing Tech University , 30 South Puzhu Road , Nanjing 211816 , China.
Abstract:
Recently, single-layer CrI3, a member of the chromium trihalides CrX3 (where X = Cl, Br, or I), has been exfoliated and experimentally demonstrated as an atomically thin material suitable for two-dimensional spintronics. Valley splitting due to the magnetic proximity effect has been demonstrated in a WSe2/CrI3 van der Waals heterojunction. However, the understanding of the mechanisms behind the favorable performance of CrI3 is still limited. Here, we systematically study the carrier mobility and the intrinsic point defects in CrX3 and assess their influence on valley splitting in WSe2/CrI3 by first-principles calculations. The flat-band nature induces extremely large carrier mass and ultralow carrier mobility. In addition, intrinsic point defects-localized states in the middle of the band gap-show deep transition energy levels and act as carrier recombination centers, further lowering the carrier mobility. Moreover, vacancies in CrI3 can enhance ferromagnetism and valley splitting in a WSe2/CrI3 heterojunction, proving that chromium trihalides are excellent ferromagnetic insulators for spintronic and valleytronic applications.
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