Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Semiconductors01:22

Semiconductors

1.4K
There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
1.4K
Limiting Reactant02:27

Limiting Reactant

69.6K
The relative amounts of reactants and products represented in a balanced chemical equation are often referred to as stoichiometric amounts. However, in reality, the reactants are not always present in the stoichiometric amounts indicated by the balanced equation.
69.6K
Types of Semiconductors01:20

Types of Semiconductors

1.4K
Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
1.4K
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

938
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
938
The Number e as a Limit01:29

The Number e as a Limit

72
The number e is a fundamental constant in calculus, playing a central role in describing continuous change, particularly exponential growth. It is most naturally defined through its relationship with the natural logarithm, which is the inverse of the exponential function with base e. This relationship allows e to be characterized using basic principles of differentiation rather than as an arbitrary numerical constant.A key property of the natural logarithm function, ln x, is that its derivative...
72
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

566
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
566

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Targeted periodontitis management in ACS patients.

British dental journal·2025
Same author

Self-oscillating, self-stabilizing, and self-referenced electro-optic comb.

Optics express·2025
Same author

Diffractive light-trapping transparent electrodes using zero-order suppression.

Nanophotonics (Berlin, Germany)·2024
Same author

Two-color Semiconductor Mode-locked Laser system for Multiphoton Imaging Applications.

IEEE photonics technology letters : a publication of the IEEE Laser and Electro-optics Society·2023
Same author

Efficacy of pentamidine-loaded chitosan nanoparticles as a novel drug delivery system for Leishmania tropica.

Tropical biomedicine·2023
Same author

Multi-dimensional data transmission using inverse-designed silicon photonics and microcombs.

Nature communications·2022
Same journal

Multifunctional reconfigurable terahertz metasurface based on vanadium dioxide phase transition: achieving broadband absorption and efficient polarization conversion.

Applied optics·2026
Same journal

High-Q-factor electromagnetically induced transparency utilizing quasi-bound states in the continuum in an all-dielectric terahertz metasurface.

Applied optics·2026
Same journal

Automated stitching interferometry for high-precision metrology of X-ray mirrors.

Applied optics·2026
Same journal

Experimental demonstration of an approach to designing a metal-dielectric DBR resonant cavity structure.

Applied optics·2026
Same journal

High-precision wavefront reconstruction from a single-shot interferogram using a physics-driven hybrid feature calibration network.

Applied optics·2026
Same journal

Ultra-high-Q Fano resonance based on coupled topological corner states in Kagome photonic crystals.

Applied optics·2026
See all related articles

Related Experiment Video

Updated: Jan 25, 2026

Generation and Coherent Control of Pulsed Quantum Frequency Combs
06:42

Generation and Coherent Control of Pulsed Quantum Frequency Combs

Published on: June 8, 2018

9.6K

Exploring the limits of semiconductor-laser-based optical frequency combs.

Peter J Delfyett, A Klee, K Bagnell

    Applied Optics
    |May 3, 2019
    PubMed
    Summary
    This summary is machine-generated.

    This study explores the performance limits of stabilized optical frequency combs generated by semiconductor lasers. We investigated key characteristics like comb line count, linewidth, and control over repetition rate and offset frequency.

    More Related Videos

    Characterizing Far-infrared Laser Emissions and the Measurement of Their Frequencies
    09:38

    Characterizing Far-infrared Laser Emissions and the Measurement of Their Frequencies

    Published on: December 18, 2015

    12.6K
    Femtosecond Laser Filaments for Use in Sub-Diffraction-Limited Imaging and Remote Sensing
    06:16

    Femtosecond Laser Filaments for Use in Sub-Diffraction-Limited Imaging and Remote Sensing

    Published on: April 25, 2019

    8.0K

    Related Experiment Videos

    Last Updated: Jan 25, 2026

    Generation and Coherent Control of Pulsed Quantum Frequency Combs
    06:42

    Generation and Coherent Control of Pulsed Quantum Frequency Combs

    Published on: June 8, 2018

    9.6K
    Characterizing Far-infrared Laser Emissions and the Measurement of Their Frequencies
    09:38

    Characterizing Far-infrared Laser Emissions and the Measurement of Their Frequencies

    Published on: December 18, 2015

    12.6K
    Femtosecond Laser Filaments for Use in Sub-Diffraction-Limited Imaging and Remote Sensing
    06:16

    Femtosecond Laser Filaments for Use in Sub-Diffraction-Limited Imaging and Remote Sensing

    Published on: April 25, 2019

    8.0K

    Area of Science:

    • Optics and Photonics
    • Semiconductor Lasers
    • Frequency Combs

    Background:

    • Optical frequency combs (OFCs) are crucial for precision measurements.
    • Semiconductor lasers offer compact and cost-effective platforms for OFC generation.
    • Understanding performance limitations is key to advancing OFC technology.

    Purpose of the Study:

    • To investigate the performance limits of stabilized optical frequency combs.
    • To analyze operating characteristics including comb line count and tooth linewidth.
    • To explore parameters influencing independent control of repetition rate and offset frequency.

    Main Methods:

    • Utilized stabilized optical frequency combs derived from mode-locked semiconductor diode lasers.
    • Examined physical parameters affecting pulse repetition rate and offset frequency control.
    • Assessed the potential for self-stabilization in the laser system.

    Main Results:

    • Characterized the number of comb lines and comb tooth linewidth.
    • Identified physical parameters critical for independent control of repetition rate and offset frequency.
    • Evaluated the feasibility of self-stabilization in semiconductor laser-based OFCs.

    Conclusions:

    • Semiconductor laser-based OFCs exhibit specific performance limitations.
    • Precise control over OFC parameters is achievable through careful management of physical factors.
    • Further research can optimize these systems for advanced applications.