Miniaturization of CMOS.

Area of Science:

• Semiconductor device physics and engineering.
• Materials science for advanced electronics.
• Integrated circuit (IC) design and fabrication.

Background:

• The International Technology Roadmap for Semiconductors (ITRS) has guided the continuous miniaturization of Metal Oxide Effect Transistors (MOSFETs) for nearly five decades.
• Transistor architecture has transitioned from planar 2D designs to advanced 3D Fin Field-Effect Transistors (FinFETs).
• Innovations include modified gate, source/drain regions, and strain engineering to enhance performance.

Purpose of the Study:

• To detail the structural and process modifications of MOSFETs in alignment with the More Moore strategy.
• To highlight the methodologies, challenges, and difficulties encountered as the ITRS nears its conclusion.
• To explore potential new channel materials for semiconductor devices beyond the Moore era.

Main Methods:

• Review of historical development and technological advancements in MOSFET scaling.
• Analysis of structural evolution from planar to 3D FinFET architectures.
• Discussion of process integration techniques and materials science innovations.

Main Results:

• Demonstration of significant structural changes in MOSFETs, including the adoption of FinFETs.
• Identification of key challenges in continuing the miniaturization trend under the ITRS.
• Exploration of alternative channel materials to overcome current scaling limitations.

Conclusions:

• MOSFET evolution, particularly the shift to FinFETs, has been crucial for adhering to the More Moore scaling strategy.
• The semiconductor industry faces significant hurdles as it approaches the physical limits of miniaturization.
• Future advancements in semiconductor technology will likely rely on novel materials and device designs beyond traditional silicon MOSFETs.