Related Experiment Video
Updated: Jan 25, 2026

Graphene-Assisted Quasi-van der Waals Epitaxy of AlN Film on Nano-Patterned Sapphire Substrate for Ultraviolet Light Emitting Diodes
Published on: June 25, 2020
Zero-biased deep ultraviolet photodetectors based on graphene/cleaved (100) Ga2O3 heterojunction
Abstract:
In this paper, fast response, zero-biased, solar-blind UV photodetectors based on graphene/β-Ga2O3 heterojunctions were fabricated by transferring a monolayer graphene onto fresh cleaved β-Ga2O3 (100) single crystal substrate. At zero bias, the photo responsivity at 254 nm and the UV/visible rejection ratio (R235 nm/R400 nm) and the response time are obtained to be 10.3 mA/W and 2.28 × 102 and 2.24 μs, respectively, for the graphene/β-Ga2O3 (100) detector. The fast response and the high sensitivity can be attributed to the high mobility and UV transparency of graphene top-electrode and the low defect density of the β-Ga2O3 (100) cleaved surface. Such zero-biased detectors are very promising for next-generation solar-blind UV photodetection.
Related Concept Videos
Confirmation Biases
Hindsight Biases
Bias
In statistics, a sampling bias is created when a sample is collected from a population, and some members of the population are not as likely to be chosen as others (remember, each member...
Diode: Forward bias
The behavior of a diode in forward bias...
Biasing of FET
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
Biasing of P-N Junction
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...

