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Bonding in Metals

Bonding in Metals

Metallic bonds are formed between two metal atoms. A simplified model to describe metallic bonding has been developed by Paul Drüde called the “Electron Sea Model”.

Metallic Solids

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Metallic solids such as crystals of copper, aluminum, and iron are formed by metal atoms. The structure of metallic crystals is often described as a uniform distribution of atomic nuclei within a “sea” of delocalized electrons. The atoms within such a metallic solid are held together by a unique force known as metallic bonding that gives rise to many useful and varied bulk properties.
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Classifying Matter by Composition

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A mixture is composed of two or...

Alkali Metals

Alkali Metals

Group 1 elements are soft and shiny metallic solids. They are malleable, ductile, and good conductors of heat and electricity. The melting points of the alkali metals are unusually low for metals and decrease going down the group, while the density increases going down the group with the exception of potassium (Table 1).
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Metal-Ligand Bonds

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The hemoglobin in the blood, the chlorophyll in green plants, vitamin B-12, and the catalyst used in the manufacture of polyethylene all contain coordination compounds. Ions of the metals, especially the transition metals, are likely to form complexes.
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Transition metals are defined as those elements that have partially filled d orbitals. As shown in Figure 1, the d-block elements in groups 3–12 are transition elements. The f-block elements, also called inner transition metals (the lanthanides and actinides), also meet this criterion because the d orbital is partially occupied before the f orbitals.

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Thin Film Composite Silicon Elastomers for Cell Culture and Skin Applications: Manufacturing and Characterization

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Composite metal substrate for thin film AlGaInP LED applications.

R H Horng, Shreekant Sinha, C P Lee

|May 5, 2019

Summary

This summary is machine-generated.

This study demonstrates high-performance AlGaInP vertical light-emitting-diodes (LEDs) using a novel copper-invar-copper (CIC) composite substrate. The CIC substrate enables efficient heat dissipation, leading to reduced red-shift and high output power for advanced LED applications.

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Area of Science:

Optoelectronics
Materials Science

Background:

AlGaInP-based LEDs are crucial for various lighting applications.
Traditional substrates face challenges with heat dissipation and thermal expansion mismatch.
Thin-film LED fabrication requires advanced substrate solutions.

Purpose of the Study:

To fabricate and assess the feasibility of n-side up, thin-epilayer, AlGaInP vertical LEDs using a copper-invar-copper (CIC) composite substrate.
To evaluate the performance of LEDs packaged with CIC substrates.
To explore the potential of CIC substrates for high-efficiency thin-film LEDs.

Main Methods:

Fabrication of AlGaInP vertical LEDs using wafer bonding and epilayer transferring technologies.
Utilizing a 104-μm-thick CIC substrate with specific layer compositions (Cu/Invar/Cu).
Characterization of LED performance, including thermal properties, spectral shift, and output power.

Main Results:

The CIC substrate exhibits a coefficient of thermal expansion compatible with GaAs and AlGaInP epilayers.
High thermal conductivity of the CIC substrate (160 W/m-K) ensures efficient heat dissipation.
Packaged LEDs showed a low red shift phenomenon (623-642 nm from 100 mA to 1 A) and achieved a high output power of 212 mW at 800 mA.

Conclusions:

The copper-invar-copper (CIC) composite substrate is a viable and effective solution for fabricating high-performance AlGaInP vertical light-emitting-diodes (LEDs).
The thermal management capabilities of the CIC substrate significantly improve LED performance by minimizing red-shift and maximizing output power.
This approach offers a promising pathway for developing next-generation, high-efficiency thin-film LEDs with conventional vertical electrodes.