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Fabrication and Characterization of Thickness Mode Piezoelectric Devices for Atomization and Acoustofluidics
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Electrical Properties and Interfacial Issues of HfO2/Ge MIS Capacitors Characterized by the Thickness of La2O3

Lu Zhao1, Hongxia Liu2, Xing Wang3

  • 1Key Laboratory for Wide Band Gap Semiconductor Materials and Devices of Education, School of Microelectronics, Xidian University, Xi'an 710071, China. lzhaoxd@163.com.

Nanomaterials (Basel, Switzerland)
|May 8, 2019
PubMed

Keywords:
Ge surface engineeringLa2O3 passivation layeratomic layer depositionelectrical properties

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