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Published on: May 23, 2018
High-Sensitivity and Long-Life Microchannel Plate Processed by Atomic Layer Deposition
Weiwei Cao1,2,3, Bingli Zhu4, Xiaohong Bai4
1Key Laboratory of Ultrafast Photoelectric Diagnostic Technology, Xi'an Institute of Optics and Precision Mechanics, Chinese Academy of Sciences, Xi'an, 710119, China. caoweiwei@opt.ac.cn.
Researchers improved microchannel plates (MCPs) by using atomic layer deposition (ALD) to apply an aluminum oxide (Al2O3) coating. This ALD-MCP enhances electron multiplier performance, showing higher gain and longer lifetime.
Area of Science:
- Materials Science
- Physics
- Electronics Engineering
Background:
- Microchannel plates (MCPs) are crucial components in electron multiplier devices used across various scientific disciplines.
- Traditional MCPs often suffer from high dark current and limited operational lifetime, hindering their application.
- Developing advanced materials and deposition techniques is essential for improving MCP performance.
Purpose of the Study:
- To overcome the limitations of traditional MCPs by employing a pure aluminum oxide (Al2O3) secondary electron emission (SEE) layer.
- To investigate the feasibility of using atomic layer deposition (ALD) for coating MCP pores with Al2O3.
- To systematically analyze the impact of ALD-grown Al2O3 on MCP characteristics, including gain, sensitivity, and lifetime.
Main Methods:
- Atomic Layer Deposition (ALD) was used to deposit pure aluminum oxide (Al2O3) within the pores of MCPs.
- Scanning Electron Microscopy (SEM) was employed to examine the morphology of the coated MCPs.
- Energy Dispersive Spectroscopy (EDS) was utilized to analyze the elemental distribution and confirm the presence of Al2O3.
- Output current measurements were conducted for MCPs with varying Al2O3 thicknesses to determine optimal deposition parameters.
Main Results:
- The systematic investigation confirmed successful deposition of Al2O3 within MCP pores using ALD.
- SEM and EDS analyses provided detailed insights into the morphology and elemental composition of the ALD-coated samples.
- An optimal thickness for the Al2O3 layer was identified, leading to enhanced performance.
- Experimental tests demonstrated that the ALD-MCP achieved an average gain nearly five times greater than traditional MCPs.
Conclusions:
- ALD is an effective technique for depositing high-quality Al2O3 SEE layers in MCPs.
- The ALD-grown Al2O3 layer significantly improves MCP performance, including higher gain, enhanced sensitivity, and extended lifetime.
- This advancement in MCP technology holds promise for applications requiring superior electron multiplication capabilities.
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