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Damage-free mica/MoS2 interface for high-performance multilayer MoS2 field-effect transistors.

Xiao Zou1, Jingping Xu2, Lu Liu2

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|May 9, 2019
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A new method uses a mica flake as a gate dielectric for molybdenum disulfide (MoS2) field-effect transistors (FETs), significantly improving electrical properties and stability by avoiding surface damage. This approach is ideal for low-power electronics.

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Area of Science:

  • Materials Science
  • Solid-State Physics
  • Nanotechnology

Background:

  • Vacuum deposition of gate dielectrics on MoS2 field-effect transistors (FETs) causes surface damage, degrading mobility and subthreshold swing.
  • This damage arises from chemical bonding and high-energy metal atoms, hindering device performance.

Purpose of the Study:

  • To develop a fabrication method for top-gated MoS2 FETs that prevents surface damage.
  • To achieve enhanced electrical properties and stability in MoS2 FETs.

Main Methods:

  • Fabrication of a top-gated MoS2 transistor using a 9 nm mica flake as the gate dielectric via direct dry transfer.
  • Characterization of electrical properties including on-off ratio, threshold voltage, field-effect mobility (μFE), subthreshold swing (SS), and interface-state density.
  • Assessment of device stability through gate-bias stressing.

Main Results:

  • The MoS2 FET exhibited an on-off ratio of ~10^8, a low threshold voltage of ~0.2 V, a record μFE of 134 cm^2 V^-1 s^-1, and a small SS of 72 mV dec^-1.
  • A low interface-state density of 8.8 × 10^11 cm^-2 eV^-1 was achieved without specialized MoS2 engineering.
  • Enhanced stability was demonstrated with a normalized threshold voltage shift of 1.2 × 10^-2 V MV^-1 cm^-1 after gate-bias stressing.

Conclusions:

  • The dry transfer of a damage-free mica dielectric significantly reduces charged-impurity and interface-roughness scattering.
  • The resulting MoS2 transistors offer excellent electrical performance and stability, suitable for low-power electronic applications.