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Updated: Jan 25, 2026

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
Published on: June 3, 2015
Generation of multiphoton quantum states on silicon
Ming Zhang1,2, Lan-Tian Feng3,4, Zhi-Yuan Zhou3,4
11State Key Laboratory for Modern Optical Instrumentation, Centre for Optical and Electromagnetic Research, Zhejiang Provincial Key Laboratory for Sensing Technologies, College of Optical Science and Engineering, Zhejiang University, Zijingang Campus, Hangzhou, 310058 China.
Abstract:
Multiphoton quantum states play a critical role in emerging quantum technologies and greatly improve our fundamental understanding of the quantum world. Integrated photonics is well recognized as an attractive technology offering great promise for the generation of photonic quantum states with high-brightness, tunability, stability, and scalability. Herein, we demonstrate the generation of multiphoton quantum states using a single-silicon nanophotonic waveguide. The detected four-photon rate reaches 0.34 Hz even with a low-pump power of 600 μW. This multiphoton quantum state is also qualified with multiphoton quantum interference, as well as quantum state tomography. For the generated four-photon states, the quantum interference visibilities are greater than 95%, and the fidelity is 0.78 ± 0.02. Furthermore, such a multiphoton quantum source is fully compatible with the on-chip processes of quantum manipulation, as well as quantum detection, which is helpful for the realization of large-scale quantum photonic integrated circuits (QPICs) and shows great potential for research in the area of multiphoton quantum science.
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